Influence of growth parameters and conditions on the oval defect density in GaAs layers grown by MBE
- 24 July 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (3) , 533-540
- https://doi.org/10.1016/0022-0248(89)90048-1
Abstract
No abstract availableKeywords
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