A Continuous, Analytic Drain-Current Model for DG MOSFETs
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- 6 February 2004
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 25 (2) , 107-109
- https://doi.org/10.1109/led.2003.822661
Abstract
This letter presents a continuous analytic current-voltage (I-V) model for double-gate (DG) MOSFETs. It is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation. The entire I/sub ds/(V/sub g/,V/sub ds/) characteristics for all regions of MOSFET operation: linear, saturation, and subthreshold, are covered under one continuous function, making it ideally suited for compact modeling. By preserving the proper physics, this model readily depicts "volume inversion" in symmetric DG MOSFETs-a distinctively noncharge-sheet phenomenon that cannot be reproduced by standard charge-sheet based I-V models. It is shown that the I-V curves generated by the analytic model are in complete agreement with two-dimensional numerical simulation results for all ranges of gate and drain voltages.Keywords
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