Silicon carbide on insulator formation using the Smart Cut process [Note 1]
- 6 June 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (12) , 1144-1145
- https://doi.org/10.1049/el:19960717
Abstract
The Smart Cut process has been applied for the first time to SiC, in order to form silicon carbide on insulator (SiCOI) structures. These structures have been formed on polycristalline SiC and on silicon substrates.Keywords
This publication has 2 references indexed in Scilit:
- Silicon on insulator material technologyElectronics Letters, 1995
- Silicon Carbide Wafer BondingJournal of the Electrochemical Society, 1995