Highly coherent long cavity GaAs/AlGaAs single quantum-well lasers
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 25 (9) , 2013-2018
- https://doi.org/10.1109/3.35227
Abstract
No abstract availableThis publication has 31 references indexed in Scilit:
- Modulation bandwidth of GaAs/AlGaAs single quantum well lasers operating at the second quantized stateApplied Physics Letters, 1989
- Spectral and dynamic characteristics of buried-heterostructure single quantum well (Al,Ga)As lasersApplied Physics Letters, 1988
- A model for GRIN-SCH-SQW diode lasersIEEE Journal of Quantum Electronics, 1988
- Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasersIEEE Journal of Quantum Electronics, 1985
- Solutions for planar optical waveguide equations by selecting zero elements in a characteristic matrixJournal of the Optical Society of America A, 1985
- Longitudinal mode self-stabilization in semiconductor lasersJournal of Applied Physics, 1982
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Fundamental line broadening of single-mode (GaAl)As diode lasersApplied Physics Letters, 1981
- Novel method for high resolution measurement of laser output spectrumElectronics Letters, 1980
- Single-mode stabilization by traps in semiconductor lasersIEEE Journal of Quantum Electronics, 1980