A model explaining mask-corner undercut phenomena in anisotropic silicon etching: a saddle point in the etching-rate diagram
- 1 April 2002
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 97-98, 758-763
- https://doi.org/10.1016/s0924-4247(02)00017-1
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 19 references indexed in Scilit:
- Differences in anisotropic etching properties of KOH and TMAH solutionsSensors and Actuators A: Physical, 2000
- Applications and simulation of unconventional bulk-micromachining using underetching of {100} silicon planesMicrosystem Technologies, 1999
- Anistropic multi-step etch processes of siliconJournal of Micromechanics and Microengineering, 1997
- Effects of (110)-oriented corner compensation structures on membrane quality and convex corner integrity in (100)-silicon using aqueous KOHJournal of Micromechanics and Microengineering, 1995
- An ion milling pattern transfer technique for fabrication of three-dimensional micromechanical structuresJournal of Microelectromechanical Systems, 1993
- Anisotropic etching of silicon in TMAH solutionsSensors and Actuators A: Physical, 1992
- Etching roughness for (100) silicon surfaces in aqueous KOHJournal of Applied Physics, 1991
- Hydration Model for the Molarity Dependence of the Etch Rate of Si in Aqueous Alkali HydroxidesJournal of the Electrochemical Society, 1991
- Fabrication of Non‐Underetched Convex Corners in Anisotropic Etching of (100)‐Silicon in Aqueous KOH with Respect to Novel Micromechanic ElementsJournal of the Electrochemical Society, 1990
- Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation LayersJournal of the Electrochemical Society, 1990