FP-LAPW and pseudopotential calculations of the structural phase transformations of GaN under high-pressure
- 1 October 2000
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 116 (7) , 389-393
- https://doi.org/10.1016/s0038-1098(00)00336-7
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Full-potential, linearized augmented plane wave programs for crystalline systemsPublished by Elsevier ,2002
- The instability of the cinnabar phase of ZnS under high pressureJournal of Physics: Condensed Matter, 1998
- Optical and structural properties of III-V nitrides under pressurePhysical Review B, 1994
- New phases and physical properties of the semiconducting nitrides: AlN, GaN, InNComputational Materials Science, 1994
- High-pressure structure of gallium nitride: Wurtzite-to-rocksalt phase transitionPhysical Review B, 1993
- High-power InGaN/GaN double-heterostructure violet light emitting diodesApplied Physics Letters, 1993
- Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressurePhysical Review B, 1992
- High pressure phase transition in gallium nitrideHigh Pressure Research, 1991
- High-pressure phase of gallium nitridePhysical Review B, 1991
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989