The performance limiting factors as RF MOSFETs scale down
- 7 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 151-155
- https://doi.org/10.1109/rfic.2000.854437
Abstract
[[abstract]]The measured RF performance of 0.5, 0.25, and 0.18 μm MOSFETs gradually saturates as scaling down occurs, which can be explained by the derived analytical equation and simulation. The source-drain overlap capacitance, Cgd, and non-quasi-static effect are the main factors but scale much slower than Lg[[fileno]]2060114030002[[department]]工程與系統科學Keywords
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