Photoluminescence of ion-implanted GaN
- 1 December 1976
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (12) , 5387-5390
- https://doi.org/10.1063/1.322566
Abstract
Thirty-five elements were implanted in GaN. Their photoluminescence spectra were measured and compared to those of an unimplanted control sample. Most impurities emit a peak at about 2.15 eV. Mg, Zn, Cd, Ca, As, Hg, and Ag have more characteristic emissions. Zn provides the most efficient recombination center. A set of midgap states is generated during the damage-annealing treatment.This publication has 12 references indexed in Scilit:
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