Differing Results Obtained in the Doping of Semiconductors by Energetic Ions
- 1 June 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (6) , 1985-1986
- https://doi.org/10.1063/1.1713787
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- PROPERTIES OF SILICON p-n JUNCTIONS FORMED BY Cs+ IMPLANTATION AT LOW ENERGIESApplied Physics Letters, 1963
- Range and Damage Effects of Tunnel Trajectories in a Wurtzite StructureJournal of Applied Physics, 1963
- Silicon heavily doped by energetic cesium ionsJournal of Physics and Chemistry of Solids, 1963
- Effects Produced by the Ionic Bombardment of GermaniumProceedings of the Physical Society. Section B, 1955