Low-energy ion etching and oxidation of Si in O2 magnetron plasma
- 1 September 1988
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 33-34, 1101-1106
- https://doi.org/10.1016/0169-4332(88)90422-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Plasma characteristics and etch uniformity in CF4 magnetron etching using an annular permanent magnetJournal of Applied Physics, 1987
- Low-energy ion beam oxidation of siliconIEEE Electron Device Letters, 1986
- Ion Oxidation of Si(111)Japanese Journal of Applied Physics, 1982
- Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPSJournal of Vacuum Science and Technology, 1979
- Relative sensitivity factors for quantitative Auger analysis of binary alloysSurface Science, 1977
- Electron-irradiation effect in the Auger analysis of SiO2Journal of Applied Physics, 1974