Reply to "Comment on `Critique of the tight-binding method: Ideal vacancy and surface states' "
- 15 July 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 26 (2) , 1061-1062
- https://doi.org/10.1103/physrevb.26.1061
Abstract
We show that the Comment by Vergés contains several misconceptions concerning our article on the tight-binding (orbital-removal) method as applied to the calculations of ideal vacancy and surface states, which invalidate his conclusions.Keywords
This publication has 6 references indexed in Scilit:
- Critique of tight binding (orbital removal) method: Ideal vacancy and surface statesJournal of Vacuum Science and Technology, 1981
- Cation and anion ideal vacancy induced gap levels in some III–V compound semiconductorsSolid State Communications, 1981
- Critique of the tight-binding method: Ideal vacancy and surface statesPhysical Review B, 1981
- Optical lineshapes and electronic eigenstates of substitutional defects and vacanciesJournal of Physics C: Solid State Physics, 1981
- Scattering-theoretic approach to the electronic structure of semiconductor surfaces: The (100) surface of tetrahedral semiconductors and SiPhysical Review B, 1978
- Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAsPhysical Review B, 1978