Cation and anion ideal vacancy induced gap levels in some III–V compound semiconductors
- 30 April 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 38 (3) , 183-186
- https://doi.org/10.1016/0038-1098(81)91132-7
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Surface vacancies in InP and GaAlAsApplied Physics Letters, 1980
- Theory of Substitutional Deep Traps in Covalent SemiconductorsPhysical Review Letters, 1980
- Vacancies near semiconductor surfacesPhysical Review B, 1979
- Silicon Vacancy: A Possible "Anderson Negative-" SystemPhysical Review Letters, 1979
- Self-consistent pseudopotential calculation of electronic states associated with a reconstructed silicon vacancyPhysical Review B, 1979
- Self-Consistent Method for Point Defects in Semiconductors: Application to the Vacancy in SiliconPhysical Review Letters, 1978
- Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAsPhysical Review B, 1978
- Localized defects in III-V semiconductorsPhysical Review B, 1976
- Self-consistent electronic states for reconstructed Si vacancy modelsPhysical Review B, 1976
- Wave Functions for Impurity LevelsPhysical Review B, 1954