New 500V output device structures for thin silicon layer on silicon dioxide film
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10636854,p. 97-101
- https://doi.org/10.1109/ispsd.1990.991067
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Silicon-to-silicon direct bonding methodJournal of Applied Physics, 1986
- Semi-Insulating Polycrystalline-Silicon (SIPOS) Passivation TechnologyJapanese Journal of Applied Physics, 1976