Work-function changes and photoemission final-state relaxation of Ne, Ar, Kr, Xe, H2 and N2 on gallium
- 31 December 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 192 (2-3) , 499-506
- https://doi.org/10.1016/s0039-6028(87)81142-1
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Inverse Photoemission of Adsorbed Xenon Multilayers on Ru(001): Refutation of Final-State Screening EffectsPhysical Review Letters, 1986
- Observation of Final-State Screening in Inverse Photoemission from Adsorbed Xenon LayersPhysical Review Letters, 1986
- Surface characterization by photoemission of adsorbed xenon (PAX)Journal of Vacuum Science & Technology A, 1984
- Physisorption on a low work function metal: Arups from xenon on cesiumSurface Science, 1983
- UV photoemission from physisorbed atoms and molecules: Electronic binding energies of valence levels in mono- and multilayersSurface Science, 1982
- Reaction of oxygen with gallium surfacesSurface Science, 1981
- Distance-Dependent Relaxation Shifts of Photoemission and Auger Energies for Xe on Pd(001)Physical Review Letters, 1980
- Core-Level Binding-Energy Shifts in MetalsPhysical Review Letters, 1978
- Screening energies in photoelectron spectroscopy of localized electron levelsPhysical Review B, 1976
- The effect of atomic and extra-atomic relaxation on atomic binding energiesChemical Physics Letters, 1972