Control of growth temperature at the onset of In0.53Ga0.47As growth by chemical beam epitaxy
- 2 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 135-139
- https://doi.org/10.1016/0022-0248(92)90377-u
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Growth of InP/InGaAs multiple quantum well structures by chemical beam epitaxyJournal of Crystal Growth, 1992
- Growth and MBMS studies of reaction mechanisms for InxGa1−xAs CBEJournal of Crystal Growth, 1992
- Some comparisons of chemical beam epitaxy with gas source molecular beam epitaxyJournal of Crystal Growth, 1991
- The influence of growth conditions on the growth rate and composition of GaAs and GaInAs alloys grown by chemical beam epitaxyJournal of Applied Physics, 1990
- Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxyApplied Physics Letters, 1988
- Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxyApplied Physics Letters, 1987
- The interpretation of X-ray rocking curves from III–V semiconductor device structuresJournal of Crystal Growth, 1984
- A Dynamical Theory of Diffraction for a Distorted CrystalJournal of the Physics Society Japan, 1969
- Dynamical theory of diffraction applicable to crystals with any kind of small distortionActa Crystallographica, 1962