Reply to ``Comments on `Diffusion in Silicon I-III and Generation of Excess Vacancies by Motions of Diffusion-Induced Dislocations' ''
Open Access
- 1 January 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (1) , 424
- https://doi.org/10.1063/1.1658362
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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- Self-Diffusion in Intrinsic and Extrinsic SiliconJournal of Applied Physics, 1967
- Residual Strains in Phosphorus-Diffused SiliconJournal of Applied Physics, 1967
- Dislocation motion in silicon crystals as measured by the lang X-ray techniqueActa Metallurgica, 1966
- SILICON SELF-DIFFUSIONApplied Physics Letters, 1966
- Generation and Distribution of Dislocations by Solute DiffusionJournal of Applied Physics, 1961
- Theoretical calculations of the enthalpies and entropies of diffusion and vacancy formation in semiconductorsJournal of Physics and Chemistry of Solids, 1961
- Theory of Dislocation Climb in MetalsJournal of Applied Physics, 1960