Residual Strains in Phosphorus-Diffused Silicon
- 1 February 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (2) , 725-734
- https://doi.org/10.1063/1.1709402
Abstract
An x‐ray line‐broadening method is used to determine the residual strain level in a single‐crystal silicon slice diffused with high amounts of phosphorus (surface concentration >1021 atoms/cm3). The strain level was found to be higher than that from the Prussin model. This is shown to be due to insufficient penetration of the diffusion‐induced dislocations inside the diffused layers. Moreover, the strains along 〈220〉 directions were found to be considerably higher than those along other directions. This is interpreted as additional broadening along the Burgers vector direction.This publication has 15 references indexed in Scilit:
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