Optoelectrochemical impedance measurements: A new technique for the electrical characterization of dielectric/semiconductor interfaces
- 7 July 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (1) , 32-34
- https://doi.org/10.1063/1.97074
Abstract
We have developed a new method for the characterization of dielectric/semiconductor interfaces. This technique uses an electrolyte/dielectric/semiconductor structure under electrochemical potentiostatic polarization, and a weak modulated illumination with above‐band‐gap light which acts as a probe and does not modify the thermodynamic equilibrium of the electrochemical system too much. The analyzed photopotential relative to illumination in terms of impedance allows the characterization of the dielectric/semiconductor interface. To demonstrate the optoelectrochemical impedance measurement technique, results obtained on a p‐Si/SiO2 sample are presented. The advantages of this method compared to purely solid‐state impedance and electrochemical impedance measurements are discussed.Keywords
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