Etch rates for two material selective etches in the InGaAsP/InP system
- 1 March 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (3) , 1836-1838
- https://doi.org/10.1063/1.330603
Abstract
Two material selective etching solutions have been evaluated for the InGaAsP/InP system. One of these solutions etches the InGaAsP-InGaAs alloys and stops at InP, while the other etches InP and stops on the ternary or quaternary alloys. Room-temperature etch rates were measured for both etches on bulk and liquid phase epitaxial materials.This publication has 4 references indexed in Scilit:
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