Effects of Thermal Donor Generation and Annihilation Upon Oxygen Precipitation
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Thermal Donor Removal by Rapid Thermal Annealing: Infrared AbsorptionMRS Proceedings, 1985
- United model for formation kinetics of oxygen thermal donors in siliconPhysical Review B, 1984
- Early stages of oxygen segregation and precipitation in siliconJournal of Applied Physics, 1984
- Temperature Ramping for Nucleation of Oxygen Precipitates in SiliconMRS Proceedings, 1984
- A Defect Control Technique for the Intrinsic Gettering in Silicon Device ProcessingJapanese Journal of Applied Physics, 1984
- Early Stages of Oxygen Clustering and Its Influence on Electrical Behavior of SiliconMRS Proceedings, 1982
- Carbon and the Kinetics of Oxygen Precipitation in SiliconMRS Proceedings, 1982