Large Lattice Mismatch Epitaxy

This publication has 16 references indexed in Scilit:

• GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers
  Applied Physics Letters, 1995
• Island formation in Ge/Si epitaxy
  Materials Science and Engineering: B, 1995
• Scanning tunneling microscopy studies of the GaAs(001) surface and the nucleation of ZnSe on GaAs(001)
  Materials Science and Engineering: B, 1995
• Misfit dislocations in low-temperature grown Ge/Si heterostructures
  Philosophical Magazine A, 1995
• Mechanism of dislocation climb in binary and mixed III-V semiconductors
  Philosophical Magazine A, 1995
• Fabrication of relaxed GeSi buffer layers on Si(100) with low threading dislocation density
  Materials Science and Engineering: B, 1992
• Mechanism of formation of 60° and 90° misfit dislocations in semiconductor heterostructures
  Materials Science and Engineering: B, 1991
• Dislocation replication and annihilation in InP homoepitaxial layers grown by liquid phase epitaxy
  Materials Science and Engineering: B, 1990
• Growth- and processing-induced defects in semiconductors
  Progress in Materials Science, 1989
• Accommodation of misfit across the interface between single-crystal films of various face-centred cubic metals
  Philosophical Magazine, 1966