Fabrication of relaxed GeSi buffer layers on Si(100) with low threading dislocation density
- 1 August 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 14 (3) , 332-335
- https://doi.org/10.1016/0921-5107(92)90316-2
Abstract
No abstract availableKeywords
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