Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature
- 1 July 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (7) , 833-837
- https://doi.org/10.1007/bf02665972
Abstract
No abstract availableKeywords
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