Effects of displaced p-n junction of heterojunction bipolar transistors

This publication has 16 references indexed in Scilit:

• The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors
  IEEE Electron Device Letters, 1992
• Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface
  IEEE Transactions on Electron Devices, 1990
• Improved high frequency performance of AlInAs/GaInAs HBTs through use of low temperature GaInAs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990
• Analysis of the operation of GaAlAs/GaAs HBTs
  IEEE Transactions on Electron Devices, 1989
• DC performance of GaAs/Al/sub x/Ga/sub 1-x/As p-n-p heterojunction bipolar transistors grown by OMVPE
  IEEE Transactions on Electron Devices, 1988
• The effect of the base—collector potential spike on the common-emitter I—V characteristics of AlGaAs double-heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1987
• An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1984
• Nonuniform surface potentials and their observation by surface sensitive techniques
  Journal of Vacuum Science & Technology B, 1984
• Numerical analysis of heterostructure semiconductor devices
  IEEE Transactions on Electron Devices, 1983
• On the definition of the cutoff frequency f_T
  Proceedings of the IEEE, 1969