The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors
- 1 March 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (3) , 140-142
- https://doi.org/10.1109/55.144990
Abstract
The effects of base p-dopant diffusion at junction interfaces of InGaAs/InAlAs HBTs with thin base thicknesses and high base dopings are reported. It is shown that HBTs with compositionally graded emitter-based (E-B) junctions are very tolerant to base dopant outdiffusion into the E-B graded region. The RF performance is nearly unaffected by the diffusion, and the DC current gain and E-B junction breakdown voltages are improved with finite Be diffusion into the E-B graded region.Keywords
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