AlInAs/GaInAs HBT IC technology
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 26 (3) , 415-421
- https://doi.org/10.1109/4.75028
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- 12 GHz GaAs J-FET 256/258 dual-modulus prescaler ICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A wideband, low-power, high-sensitivity and small-size 2.5-GHz static frequency divider ICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- AlInAs/GaInAs HBT IC technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High speed dual modulus dividers using AlInAs-GaInAs HBT IC technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Improved AlInAs/GaInAs HBTs for high-speed circuitsPublished by SPIE-Intl Soc Optical Eng ,1990
- Heterojunction bipolar transistors using Si-Ge alloysIEEE Transactions on Electron Devices, 1989
- A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT'sIEEE Electron Device Letters, 1989
- A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structureIEEE Transactions on Electron Devices, 1988
- Multigigahertz CMOS dual-modulus prescaler ICIEEE Journal of Solid-State Circuits, 1988
- A 4.5-GHz GaAs dual-modulus prescalar ICIEEE Transactions on Microwave Theory and Techniques, 1988