AlInAs/GaInAs HBT IC technology
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuitsIEEE Electron Device Letters, 1989
- A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT'sIEEE Electron Device Letters, 1989
- GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for applicationIEEE Transactions on Electron Devices, 1989
- A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structureIEEE Transactions on Electron Devices, 1988
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982