Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits
- 1 October 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (10) , 467-469
- https://doi.org/10.1109/55.43102
Abstract
AlInAs-GaInAs heterojunction bipolar transistors (HBTs) and static flip-flop frequency dividers have been fabricated. An f/sub t/ and an f/sub max/ of 49 and 62 GHz, respectively, have been achieved in a device with a 2*5- mu m/sup 2/ emitter. Current-mode logic (CML) was used to implement static divide-by-two and divide-by-four circuits. The divide-by-two circuit operated at 15 GHz with 82-mW power dissipation for the single flip-flop. The divide-by-four circuit operated at 14.5 GHz with a total chip power dissipation of 444 mW.Keywords
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