High-speed InAlAs/InGaAs heterojunction bipolar transistors
- 1 June 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (6) , 312-314
- https://doi.org/10.1109/55.727
Abstract
InAlAs/InGaAs heterojunction bipolar transistors fabricated from wafers grown by molecular beam epitaxy are discussed. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of devices 6*10 mu m/sup 2/. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to improved microwave performance.<>Keywords
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