The DC characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling

This publication has 14 references indexed in Scilit:

• Modeling and analysis of GaAs/AlGaAs heterojunction bipolar transistors for improved current gain and f/sub T/
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• 12-40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Reliability analysis of GaAs/AlGaAs HBTs under forward current/temperature stress
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Improved current gain and f/sub T/ through doping profile selection in linearly graded heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1990
• Measurement of the low-current base and emitter resistances of bipolar transistors
  IEEE Transactions on Electron Devices, 1987
• Comprehensive analysis of Si-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ ($x=0\mathrm{} \mathrm{to} 1$): Theory and experiments
  Physical Review B, 1984
• Transition region capacitance of diffused p-n junctions
  IEEE Transactions on Electron Devices, 1971
• An Integral Charge Control Model of Bipolar Transistors
  Bell System Technical Journal, 1970
• Modeling of emitter capacitance
  Proceedings of the IEEE, 1969
• Large-Signal Behavior of Junction Transistors
  Proceedings of the IRE, 1954