High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition
- 3 October 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (14) , 1823-1825
- https://doi.org/10.1063/1.112855
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Comparison of the physical properties of GaN thin films deposited on (0001) and (011̄2) sapphire substratesApplied Physics Letters, 1993
- Progress and prospects for GaN and the III–V nitride semiconductorsThin Solid Films, 1993
- Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substratesJournal of Applied Physics, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- Stimulated Emission and Laser Action in Gallium NitrideApplied Physics Letters, 1971
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Über AluminiumnitridZeitschrift für anorganische und allgemeine Chemie, 1907