Studies on the selective OMVPE of (Ga,In)/(As,P)
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 243-248
- https://doi.org/10.1016/0022-0248(92)90466-v
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Current status of selective area epitaxy by OMCVDJournal of Crystal Growth, 1992
- Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBEJournal of Crystal Growth, 1991
- Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structuresJournal of Crystal Growth, 1991
- Composition of selectively grown InxGa1−xAs structures from locally resolved Raman spectroscopyJournal of Crystal Growth, 1991
- Compositional non-uniformities in selective area growth of GaInAs on InP grown by OMVPEJournal of Electronic Materials, 1990
- Measurement of atomic indium during metalorganic chemical vapor depositionJournal of Applied Physics, 1990