Carrier Transport Across Electroluminescent p-n Junctions in GaAs
- 1 June 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (6) , 1890-1892
- https://doi.org/10.1063/1.1713763
Abstract
The relationship between the voltage across GaAs p‐n junctions and the emission spectrum from carrier recombination in differently doped specimen has been carefully examined. The data are interpreted in terms of radiative recombination via levels 30 meV above the valence band edge. Furthermore, depending on the gradient of impurities in the p‐n junction, the transport mechanism is tunneling, injection, or a combination of both.This publication has 10 references indexed in Scilit:
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