Characterization of deep levels in modulation-doped AlGaAs/GaAs FET's
- 1 October 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (10) , 360-362
- https://doi.org/10.1109/edl.1983.25763
Abstract
Deep levels in modulation-doped field-effect transistors (MODFET's) fabricated from MBE-grown AlGaAs/GaAs heterostructures, have been characterized by a modified deep-level transient spectroscopy (DLTS) technique. Assuming donor-like traps in the AlGaAs layer, it is shown that the threshold voltage Vtvaries exponentially with time under pulsed-biased conditions. This result is verified experimentally by observing the transient in the drain current IDin long-gate FET's biased in saturation. The resulting Δ √{I_{D}} DLTS spectrum reveals an electron trap with an activation energy of 0.472 eV in Si-doped Al0.3Ga0.7As.Keywords
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