Spectroscopy of the deep levels in tin-doped Ga-Al-As

This publication has 9 references indexed in Scilit:

• Trapping characteristics and a donor-complex ($\mathrm{DX}$) model for the persistent-photoconductivity trapping center in Te-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$
  Physical Review B, 1979
• Donor-levels analysis in GaAlAs double heterostructure
  Applied Physics Letters, 1979
• Transient current trap spectroscopy (TCTS) in GaAs/GaAlAs heterojunctions
  Solid State Communications, 1978
• Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
  Physical Review Letters, 1977
• Long-lifetime photoconductivity effect in n-type GaAlAs
  Applied Physics Letters, 1977
• Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
  Physical Review B, 1977
• Nonradiative Recombination at Deep Levels in GaAs and GaP by Lattice-Relaxation Multiphonon Emission
  Physical Review Letters, 1975
• Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctions
  Journal of Applied Physics, 1974
• Phase equilibria in the system Al–Ga–As–Sn and electrical properties of Sn-doped liquid phase epitaxial AlxGa1−xAs
  Journal of Applied Physics, 1973