Donor-levels analysis in GaAlAs double heterostructure
- 1 January 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (1) , 108-110
- https://doi.org/10.1063/1.90599
Abstract
Capacitance versus temperature, capacitance, and current DLTS, together with optical excitation, are used to analyze the donors in the n‐type Sn‐doped GaAlAs layer of LED double heterostructures. Two donor levels are found to be associated with Sn. One of them shows a persistent photoconductivity effect at low temperature.Keywords
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