Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces
- 20 January 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (3) , 371-373
- https://doi.org/10.1063/1.106660
Abstract
When III‐V growth is interrupted for processing, in the ambient laboratory environment for example, regrown heterojunction quality has been rather disappointing in comparison to uninterrupted epitaxial growth. We have conducted a search for surface chemical preparations on In0.53Ga0.47As which would produce the highest‐quality InP/In0.53Ga0.47As regrown heterojunction interface, as measured by surface recombination velocity (SRV). After an extensive survey, we have found that dilute bromine‐based etching solutions are best for preparing a free In0.53Ga0.47As surface for subsequent InP regrowth. The resulting InP/In0.53Ga0.47As interfacial SRV is ≲20 cm/s, comparable to heterojunctions grown without any interruption at all.Keywords
This publication has 11 references indexed in Scilit:
- Regrowth of In0.53Ga0.47As/InP p-n heterojunctions by organometallic chemical vapor depositionJournal of Applied Physics, 1991
- As2S3/GaAs, a new amorphous/crystalline heterojunction for the III-V semiconductorsApplied Physics Letters, 1990
- High-quality molecular-beam epitaxial regrowth of (Al,Ga)As on Se-modified (100) GaAs surfacesJournal of Applied Physics, 1990
- Molecular beam epitaxy regrowth by use of ammonium sulfide chemical treatmentsApplied Physics Letters, 1990
- Fabrication and optical characterization of quantum wires from semiconductor materials with varying In contentJournal of Vacuum Science & Technology B, 1989
- A Model to Explain the Effective Passivation of the GaAs Surface by (NH4)2Sx TreatmentJapanese Journal of Applied Physics, 1988
- Nearly ideal electronic surfaces on naked In0.53Ga0.47As quantum wellsApplied Physics Letters, 1988
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987
- Unusually Low Surface-Recombination Velocity on Silicon and Germanium SurfacesPhysical Review Letters, 1986
- New chemical etching solution for InP and GaInAsP gratingsElectronics Letters, 1982