Effect of GaAs Intermediary Layer Thickness on the Properties of (Ga,Mn)As Tri-Layer Structures
- 8 July 2005
- journal article
- research article
- Published by Springer Nature in Journal of Superconductivity
- Vol. 18 (3) , 345-347
- https://doi.org/10.1007/s10948-005-0008-z
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrierPhysica E: Low-dimensional Systems and Nanostructures, 2004
- Valence band barrier at (Ga,Mn)As/GaAs interfacesPhysica E: Low-dimensional Systems and Nanostructures, 2002
- Spintronics: A Spin-Based Electronics Vision for the FutureScience, 2001
- Large Tunneling Magnetoresistance in GaMnAsAlAsGaMnAs Ferromagnetic Semiconductor Tunnel JunctionsPhysical Review Letters, 2001
- Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structuresApplied Physics Letters, 2000
- Properties of ferromagnetic III–V semiconductorsJournal of Magnetism and Magnetic Materials, 1999
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- (Ga, Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1997
- Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel JunctionsPhysical Review Letters, 1995
- Giant magnetic tunneling effect in Fe/Al2O3/Fe junctionJournal of Magnetism and Magnetic Materials, 1995