Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures
- 18 September 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (12) , 1873-1875
- https://doi.org/10.1063/1.1310626
Abstract
We have investigated the magnetic and magnetotransport properties of (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As semiconductor-based magnetic trilayer structures. We observe a weak ferromagnetic interlayer coupling between the two ferromagnetic (Ga, Mn)As layers as well as magnetoresistance effects due to spin-dependent scattering and to spin-dependent tunneling. Both the coupling strength and the magnetoresistance ratio decrease with the increase of temperature and/or the increase of Al composition of the nonmagnetic (Al, Ga)As layer.Keywords
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