The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs
- 7 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 443-446
- https://doi.org/10.1109/iedm.1989.74317
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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