Computer simulation of a new MESFET with an atomic-layer-doped structure
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (11) , 1909-1914
- https://doi.org/10.1109/16.7404
Abstract
No abstract availableKeywords
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