Generating a microplasma with porotts silicon
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 381-384
- https://doi.org/10.1109/sensor.1995.717211
Abstract
A porous silicon device is used for the generation of a microplasma. We describe the process of etching porous silicon and the technology of the device. The UV-line spectrum of the discharge is given, the dependence on the pressure is discussed. When dyes are applied, a visible emission with a luminous density of 240 Cd/m/sup 2/ for the green and 40 Cd/m/sup 2/ for the red are observed. A model for the physical origin of the plasma dischargv, is given.Keywords
This publication has 11 references indexed in Scilit:
- A thin film bolometer using porous silicon technologySensors and Actuators A: Physical, 1994
- Porous silicon electroluminescent devicesJournal of Luminescence, 1993
- A model for the electroluminescence of porous n-siliconJournal of Luminescence, 1993
- The Physics of Macropore Formation in Low Doped n‐Type SiliconJournal of the Electrochemical Society, 1993
- Vacuum microelectronics-1992Journal of Micromechanics and Microengineering, 1992
- Porous silicon formation mechanismsJournal of Applied Physics, 1992
- IntroductionPublished by Springer Nature ,1992
- Current-induced light emission from a porous silicon deviceIEEE Electron Device Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- An experimental and theoretical study of the formation and microstructure of porous siliconJournal of Crystal Growth, 1985