MOVPE growth of GaN on a misoriented sapphire substrate
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 509-512
- https://doi.org/10.1016/0022-0248(91)90512-4
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3Journal of Crystal Growth, 1990
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrateThin Solid Films, 1988
- Critical misorientation morphology in AlGaAs and GaAs grown by atmospheric-pressure MOCVD on misoriented substratesJournal of Crystal Growth, 1988
- Zn related electroluminescent properties in MOVPE grown GaNJournal of Crystal Growth, 1988
- Growth of AlGaAs and GaAs by atmospheric-pressure MOCVD on lenticular substratesJournal of Crystal Growth, 1987
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Growth anisotropy in the GaN/Al2O3 systemJournal of Crystal Growth, 1977