Growth anisotropy in the GaN/Al2O3 system
- 1 October 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 40 (2) , 239-252
- https://doi.org/10.1016/0022-0248(77)90011-2
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Optimized growth conditions and properties of N-type and insulating GaNMaterials Research Bulletin, 1976
- High pressure solution growth of GaNJournal of Crystal Growth, 1975
- Nachweis von Stapelfehlern in GaN‐Epitaxieschichten mittels ElektronenbeugungCrystal Research and Technology, 1975
- Zur Epitaxie von Galliumnitrid auf Korund im System GaCl/NH3/ArCrystal Research and Technology, 1974
- GaN yellow-light emitting diodesJournal of Luminescence, 1973
- Étude de l'anisotropie de la croissance épitaxiale de GaAs en phase vapeurJournal of Crystal Growth, 1972
- Layer growth in silicon epitaxyJournal of Crystal Growth, 1972
- Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substratesJournal of Crystal Growth, 1971
- OPTICAL ABSOPTION OF GaNApplied Physics Letters, 1970
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969