Interface Reaction and Atomic Transport During COSi2 Film Formation
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Influence of Silicon Substrate Ion Implantation on the Subsequent Microstructure Evolution in Cobalt Silicide FilmsMRS Proceedings, 1990
- The Growth Rates of Intermediate Phases in Co/Si Diffusion Couples: Bulk Versus Thin-Film StudiesMRS Proceedings, 1989
- High-resolution electron microscopy of the initial stages of CoSi2 formation on Si(111)Surface Science, 1986
- Kinetics of formation of silicides: A reviewJournal of Materials Research, 1986
- Study of cobalt-disilicide formation from cobalt monosilicideJournal of Applied Physics, 1985
- Kinetics of CoSi2 from evaporated siliconApplied Physics A, 1984
- Growth kinetics of planar binary diffusion couples: ’’Thin-film case’’ versus ’’bulk cases’’Journal of Applied Physics, 1982
- Interactions in the Co/Si thin-film system. I. KineticsJournal of Applied Physics, 1978
- Cobalt silicide layers on Si. I. Structure and growthJournal of Applied Physics, 1975
- Grain-boundary diffusionProgress in Materials Science, 1972