Microscopic defects on MBE grown LWIR Hg1−xCdxTe material and their impact on device performance
- 1 June 1999
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (6) , 649-653
- https://doi.org/10.1007/s11664-999-0048-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Origin of void defects in Hg1−xCdxTe grown by molecular beam epitaxyJournal of Electronic Materials, 1995
- Planar p-on-n HgCdTe heterostructure photovoltaic detectorsApplied Physics Letters, 1993
- Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992