Current-voltage characteristics of silicon metallic-silicide interfaces
- 1 May 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (5) , 417-426
- https://doi.org/10.1016/0038-1101(75)90043-x
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- A detailed analysis of the metal-semiconductor contactSolid-State Electronics, 1974
- New Quantum and Electronic Theory of Metal-Semiconductor ContactsPhysical Review B, 1973
- Doping dependence of the barrier height of palladium-silicide Schottky-diodesSolid-State Electronics, 1971
- Metallurgical properties and electrical characteristics of palladium silicide-silicon contactsSolid-State Electronics, 1971
- Reverse current-voltage characteristics of metal-silicide Schottky diodesSolid-State Electronics, 1970
- Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodesSolid-State Electronics, 1969
- Silicon Schottky Barrier Diode with Near-Ideal I-V CharacteristicsBell System Technical Journal, 1968
- The Richardson constant for thermionic emission in Schottky barrier diodesSolid-State Electronics, 1965
- Thermionic Emission, Field Emission, and the Transition RegionPhysical Review B, 1956
- A WKB-Type Approximation to the Schrödinger EquationPhysical Review B, 1953