Silicon Bipolar Microwave Power Transistors
- 1 May 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 27 (5) , 415-422
- https://doi.org/10.1109/tmtt.1979.1129642
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Annealing characteristics of highly P+-ion-implanted silicon crystal—two-step annealJournal of Applied Physics, 1977
- Dry process technology (reactive ion etching)Journal of Vacuum Science and Technology, 1976
- Introduction to ion and plasma etchingJournal of Vacuum Science and Technology, 1976
- Deep uv lithographyJournal of Vacuum Science and Technology, 1975
- Role of sequential annealing, oxidation, and diffusion upon defect generation in ion-implanted silicon surfacesJournal of Applied Physics, 1974
- Fully ion-implanted bipolar transistorsIEEE Transactions on Electron Devices, 1974
- Broad-Band Microwave Class-C Transistor AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1973
- Influence of heavy doping effects on the f T prediction of transistorsElectronics Letters, 1973
- A theory of transistor cutoff frequency (fT) falloff at high current densitiesIRE Transactions on Electron Devices, 1962