Characteristics of infrared photodetectors produced by radiation doping
- 1 February 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (2) , 735-739
- https://doi.org/10.1063/1.1662254
Abstract
High‐energy electrons (≈7 MeV) were used to radiation dope extrinsic silicon. Both n‐ and p‐type silicon photodetectors were fabricated using this doping technique. The 500°K blackbody responsivity, spectral response, and peak detectivity were determined for these devices. The peak detectivity values measured were 4.8×1011 cm Hz1/2 W−1 at 2.15 μ for 0.1‐Ω cm n‐type devices and 3.7×1011 cm Hz1/2 W−1 at 40 μ for 10‐Ω cm p‐type detectors. A comparison of the thermally generated background majority carrier concentration for radiation‐doped and conventional impurity‐doped detectors is made.This publication has 4 references indexed in Scilit:
- n-p JUNCTION PHOTODETECTORS IN InSb FABRICATED BY PROTON BOMBARDMENTApplied Physics Letters, 1970
- The Measurement of a High Impedance Source Having Shunt CapacitanceReview of Scientific Instruments, 1970
- Germanium radiation detectors compensated by irradiation defectsProceedings of the IEEE, 1969
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966