Characteristics of laser metalorganic vapor-phase epitaxy in GaAs

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Abstract
Growth characteristics of a laser metalorganic vapor-phase epitaxy (laser MOVPE) and the electrical and optical properties of the epitaxial layer grown by the technique are examined. The growth rate under laser MOVPE decreases with increasing substrate temperature in contrast with conventional MOVPE. The growth rate also depends on the type of the substrate, total gas flow rate and the incident laser power. The mechanism of laser MOVPE seems not to be a photothermal effect but a surface photochemical effect. The intensity of the photoluminescence at room temperature for the epitaxial layer grown by the laser MOVPE is found to be stroger than that of the epitaxial layer grown without the laser irradiation under the same growth condition. The carrier concentration is also found to be modified by the laser irradiation. It is emphasized that the laser MOVPE is very useful as a new crystal growth technology.